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专利名称：Bubble memory redundancy storage发明人：James Steven Flannigan,Dennie Joel
Shadrick,Bennett Sanford Scott
申请号：US05/804979申请日：19770609公开号：US04090251A公开日：19780516
摘要：A magnetic bubble domain memory device is provided that includes a magneticdomain data chip having a major-minor loop organization with on- chip firmware providingredundancy information enabling the use of the chip even though one or more defectiveminor loops may be present thereon. The first page written in the minor loops, where apage is defined as a common bit position in each of the plurality of minor loops, presentsa series of magnetic domains and voids where the magnetic domains represent theoperable minor loops and the voids represent the defective minor loops. The secondpage in the minor loops is a series of magnetic domains and voids separated into bytes ofinformation which are representative of the loop numbers of defective minor loops onthe chip, and a third page in the minor loops is a repetition of the first page of data.Collectively, the three pages comprise the on-chip firmware providing redundancyinformation. This magnetic domain structure is capable of screening out defective minorloops in the read and write operations, and enables synchronization of the magneticdomain device such that a selected page of data may be readily accessed from theplurality of minor loops when desired.
申请人：TEXAS INSTRUMENTS INCORPORATED
代理人：James T. Comfort,Rene' E. Grossman,James J. Elacqua
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