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专利名称：MEMORY APPARATUS AND METHOD FOR
OPERATING THE SAME
发明人：Tsung-Yi Chou,Loen-Shien Tsai申请号：US12419470申请日：20090407
公开号：US20100254194A1公开日：20101007
专利附图：
摘要：The invention provides a method for reading a first data storage of a memorycell. The method comprises sensing a first current of the memory cell by applying a firstbit line voltage on the memory cell. When the first current is larger than a first reference
current with respect to the first bit line voltage, the first data storage is determined tobe at an un-programmed state. Otherwise, a second current of the memory cell is sensedby applying a second bit line voltage on the memory cell. When the difference betweenthe first current and the second current is larger than the difference between the firstreference current and the second reference current, the first data storage is determinedto be at the un-programmed state. Otherwise, the first data storage is determined to beat a programmed state
申请人：Tsung-Yi Chou,Loen-Shien Tsai
地址：Hsinchu TW,Hsinchu TW
国籍：TW,TW
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